barrier layer造句

• Barrier layer semiconductive ceramics
  层容量半导体磁器
• Shockley barrier layer
  肖克利势垒层
• Barrier layer cell
  阻挡层光电元件
• Barrier layer capacitor
  障壁容量
• Divisional method and characteristic analysis of impermeable barrier layers in carbonate rock formation
  碳酸盐岩储层中非渗透性隔层的识别及分类评价
• The exciton lifetime in quantum well is up to 1 . 8 ps under the thickness of znse barrier layer lonm
  在znse隔离层厚度10nm时，阱中的激子寿命为1 . 8ps 。
• It is found that the highest consumption rates of barrier layers in certain parts of flip - chip joints are related to the current crowding phenomena
  结果发现在覆晶接点中，障层的消耗速率和电流聚集的位置有密切关联。
• 3 harmonized system of quality assessment for electronic components . sectional specification . fixed ceramic dielectric capacitors of barrier layer type dielectric class 3
  电子元件.质量保证体系.阻挡层型陶瓷固定电容器
• Harmonized system of quality assessment for electronic components ; sectional specification ; fixed ceramic dielectric ; capacitors of barrier layer type dielectric class 3
  电子元件质量评定协调体系.分规范.陶瓷介质绝缘层固
• We found that the exciton transference between cdznse quantum well and cdse quantum dots is dominated by exciton tunneling at a thin znse barrier layer
  在薄隔离层时，量子阱与量子点之间的激子转移过程由激子隧穿过程决定。
• Harmonized system of quality assessment for electronic components ; blank detail specification ; fixed ceramic dielectric ; capacitors of barrier layer type dielectric class 3
  电子元件质量评定协调体系.空白详细规范.陶瓷介质绝
• Harmonized system of quality assessment for electronic components : sectional specification : fixed ceramic dielectric capacitors of barrier layer type dielectric class 3
  电子元件质量评定协调体系.分规范.固定陶瓷屏障型介质电容器
• 3 specification for harmonized system of quality assessment for electronic components - blank detail specification : fixed ceramic dielectric capacitors of barrier layer type dielectric class 3
  电子元器件用质量评估协调体系规范.空白详细规范:固定式陶瓷介电阻挡层型电容器
• The structure of the strained quantum well laser has been optimized , not only the well layer , the barrier layer , the waveguide layer and the cladding layer but also the content of al , in have been studied and designed
  对应变量子阱激光器的结构进行了优化设计，对半导体激光器的阱层、垒层、波导层和限制层的厚度及in 、 al元素的含量进行了研究和设计。
• In order to suppress the formation of silicide interfacial layer , a zro2 thin film was deposited as a barrier layer between hfo2 and si . the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones
  作为阻挡层抑制hf和a的互扩散反应，减小了界面层厚度，并提高了界面层的氧化效率，与无阻档层的样品相比电学性能得到了显著的提高。
• By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing
  采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。